DC Field | Value | Language |
---|---|---|
dc.contributor.author | JEONG, YH | - |
dc.contributor.author | JO, SK | - |
dc.contributor.author | LEE, BH | - |
dc.contributor.author | SUGANO, T | - |
dc.date.accessioned | 2016-03-31T14:32:06Z | - |
dc.date.available | 2016-03-31T14:32:06Z | - |
dc.date.created | 2009-08-10 | - |
dc.date.issued | 1995-03 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 1995-OAK-0000009073 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21832 | - |
dc.description.abstract | High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P3N5 film used as gate insulator. The MISFET's thus fabricated exhibited excellent pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 10(4) seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm2/V.s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6 x 10(10)/cm2 . eV has been attained. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject | INTERFACE | - |
dc.subject | SURFACES | - |
dc.subject | SULFUR | - |
dc.title | ENHANCEMENT-MODE INP MISFETS WITH SULFIDE PASSIVATION AND PHOTO-CVD GROWN P3N5 GATE INSULATORS | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/55.363240 | - |
dc.author.google | JEONG, YH | - |
dc.author.google | JO, SK | - |
dc.author.google | LEE, BH | - |
dc.author.google | SUGANO, T | - |
dc.relation.volume | 16 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 109 | - |
dc.relation.lastpage | 111 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.16, no.3, pp.109 - 111 | - |
dc.identifier.wosid | A1995QJ27900009 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 111 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 109 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 16 | - |
dc.contributor.affiliatedAuthor | JEONG, YH | - |
dc.identifier.scopusid | 2-s2.0-0029277291 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 20 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | SULFUR | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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