DC Field | Value | Language |
---|---|---|
dc.contributor.author | KIM, H | - |
dc.contributor.author | LEE, HG | - |
dc.contributor.author | LEE, JL | - |
dc.contributor.author | MUN, JK | - |
dc.contributor.author | PARK, HM | - |
dc.date.accessioned | 2016-03-31T14:36:15Z | - |
dc.date.available | 2016-03-31T14:36:15Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1994-09 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 1994-OAK-0000008949 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21921 | - |
dc.description.abstract | A state-of-the-art GaAs power MESFET operating at a drain bias of 2.9 V has been developed using the high-low doped channel structure grown by molecular beam epitaxy. The device has 0.6 mum gate length and 16 mm gate width. The power performance tested at a 2.9 V drain bias and 900 MHz operation frequency was output power of 31.5 dBm with 11.5 dB gain and 64% power-added efficiency. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | 2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.author.google | KIM, H | - |
dc.author.google | LEE, HG | - |
dc.author.google | LEE, JL | - |
dc.author.google | MUN, JK | - |
dc.author.google | PARK, HM | - |
dc.relation.volume | 15 | - |
dc.relation.startpage | 324 | - |
dc.relation.lastpage | 326 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.15, no.9, pp.324 - 326 | - |
dc.identifier.wosid | A1994PE79800002 | - |
dc.citation.endPage | 326 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 324 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 15 | - |
dc.contributor.affiliatedAuthor | LEE, JL | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 28 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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