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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHOI, KH | - |
| dc.contributor.author | JEONG, YH | - |
| dc.contributor.author | JO, SK | - |
| dc.date.accessioned | 2016-03-31T14:37:23Z | - |
| dc.date.available | 2016-03-31T14:37:23Z | - |
| dc.date.created | 2009-08-05 | - |
| dc.date.issued | 1994-07 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.other | 1994-OAK-0000008924 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21943 | - |
| dc.description.abstract | Sulfide passivated GaAs MISFET's with the gate insulator of photo-CVD grown P3N5, films have been successfully fabricated. The device shows the drain current instability less than 22% for the period of 1.0 s approximately 1.0 X 10(4) s, due to excellent properties of sulfide treated P3N5/GaAs interrace. The effective electron mobility and extrinsic transconductance of the device are about 1300 cm2/V . sec and 133 mS, respectively, at room temperature. To estimate the effects of sulfide treatment on P3N5/GaAs interfacial properties, GaAs-MIS diodes are also fabricated. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.title | SULFIDE TREATED GAAS MISFETS WITH GATE INSULATOR OF PHOTO-CVD GROWN P3N5 FILM | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1109/55.294086 | - |
| dc.author.google | CHOI, KH | - |
| dc.author.google | JEONG, YH | - |
| dc.author.google | JO, SK | - |
| dc.relation.volume | 15 | - |
| dc.relation.startpage | 251 | - |
| dc.relation.lastpage | 253 | - |
| dc.contributor.id | 10106021 | - |
| dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.15, no.7, pp.251 - 253 | - |
| dc.identifier.wosid | A1994NV24900007 | - |
| dc.citation.endPage | 253 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 251 | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 15 | - |
| dc.contributor.affiliatedAuthor | JEONG, YH | - |
| dc.identifier.scopusid | 2-s2.0-0028461313 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 26 | - |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg