DC Field | Value | Language |
---|---|---|
dc.contributor.author | KIM, H | - |
dc.contributor.author | KWON, O | - |
dc.contributor.author | LEE, JJ | - |
dc.contributor.author | LEE, JL | - |
dc.contributor.author | MUN, JK | - |
dc.contributor.author | PARK, HM | - |
dc.contributor.author | PARK, SC | - |
dc.date.accessioned | 2016-03-31T14:38:05Z | - |
dc.date.available | 2016-03-31T14:38:05Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1994-04-28 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 1994-OAK-0000008907 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21956 | - |
dc.description.abstract | High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3V have been developed. The MESFETs with 0.6mum gate length and 12mm gate width show a maximum drain current density of 310mA/mm and a uniform transconductance of around 112mS, ranging from V(gs) = -1.8V to 0.5V. The device tested at 3.3V drain bias and 900MHz demonstrates an output power of 30.9dBm with associate power-added-efficiency of 65% for an input power of 20dBm. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.title | 3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1049/el:19940477 | - |
dc.author.google | KIM, H | - |
dc.author.google | KWON, O | - |
dc.author.google | LEE, JJ | - |
dc.author.google | LEE, JL | - |
dc.author.google | MUN, JK | - |
dc.author.google | PARK, HM | - |
dc.author.google | PARK, SC | - |
dc.relation.volume | 30 | - |
dc.relation.startpage | 739 | - |
dc.relation.lastpage | 740 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.30, no.9, pp.739 - 740 | - |
dc.identifier.wosid | A1994NM54600042 | - |
dc.citation.endPage | 740 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 739 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 30 | - |
dc.contributor.affiliatedAuthor | LEE, JL | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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