HOPPING CONDUCTION OF AMORPHOUS INO(X) FILMS IN THE PRESENCE OF AN ELECTRIC HARD GAP IN THE ELECTRON-DENSITY OF STATES
SCIE
SCOPUS
- Title
- HOPPING CONDUCTION OF AMORPHOUS INO(X) FILMS IN THE PRESENCE OF AN ELECTRIC HARD GAP IN THE ELECTRON-DENSITY OF STATES
- Authors
- KIM, JJ; LEE, HJ
- Date Issued
- 1994-02
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Amorphous indium oxide films deep in the insulating regime, show a crossover from the Efros-Shklovskii variable-range-hopping conduction to a simple-activation conduction across a hard gap. The rigid gap, resulting from hardening of the parabolic Coulomb gap near the Fermi level, is extremely insensitive to a magnetic field, which provides strong evidence of its non-magnetic nature.
- Keywords
- LOW-TEMPERATURE TRANSPORT; REGIME
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21981
- DOI
- 10.1016/0921-4526(94)90991-1
- ISSN
- 0921-4526
- Article Type
- Article
- Citation
- PHYSICA B, vol. 194, page. 1323 - 1324, 1994-02
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- There are no files associated with this item.
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