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HOPPING CONDUCTION OF AMORPHOUS INO(X) FILMS IN THE PRESENCE OF AN ELECTRIC HARD GAP IN THE ELECTRON-DENSITY OF STATES SCIE SCOPUS

Title
HOPPING CONDUCTION OF AMORPHOUS INO(X) FILMS IN THE PRESENCE OF AN ELECTRIC HARD GAP IN THE ELECTRON-DENSITY OF STATES
Authors
KIM, JJLEE, HJ
Date Issued
1994-02
Publisher
ELSEVIER SCIENCE BV
Abstract
Amorphous indium oxide films deep in the insulating regime, show a crossover from the Efros-Shklovskii variable-range-hopping conduction to a simple-activation conduction across a hard gap. The rigid gap, resulting from hardening of the parabolic Coulomb gap near the Fermi level, is extremely insensitive to a magnetic field, which provides strong evidence of its non-magnetic nature.
Keywords
LOW-TEMPERATURE TRANSPORT; REGIME
URI
https://oasis.postech.ac.kr/handle/2014.oak/21981
DOI
10.1016/0921-4526(94)90991-1
ISSN
0921-4526
Article Type
Article
Citation
PHYSICA B, vol. 194, page. 1323 - 1324, 1994-02
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