SIMULATION OF CVD PROCESS BY BOUNDARY INTEGRAL TECHNIQUE

Abstract

The chemical vapor deposition process at atmospheric pressure has been investigated analytically and numerically with a model based on the continuum transport equation and the surface reaction kinetics. Specifically, a linear stability analysis has been carried out to find some critical parameters for the control of the deposition layer morphology, and numerical analysis based on the boundary integral technique has also been performed to understand critical factors in the step coverage control for the trenches of various geometries. From the analyses, it has been found that the ratio of gas phase diffusivity to the surface reaction rate constant (D/k) plays the most critical role in both the step coverage and morphology stability, while the surface migration and surface reaction kinetics have only minor effects on the step coverage.