DC Field | Value | Language |
---|---|---|
dc.contributor.author | JANG, KS | - |
dc.contributor.author | JEONG, DH | - |
dc.contributor.author | JEONG, YH | - |
dc.contributor.author | KIM, B | - |
dc.contributor.author | LEE, JS | - |
dc.date.accessioned | 2016-04-01T00:57:04Z | - |
dc.date.available | 2016-04-01T00:57:04Z | - |
dc.date.created | 2009-08-05 | - |
dc.date.issued | 1992-05 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 1992-OAK-0000008575 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22199 | - |
dc.description.abstract | Al0.25Ga0.75As/GaAs quantum-well delta-doped channel FET's (QWDFET's) have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The FET's with a gate dimension of 1.8-mu-m x 100-mu-m had a maximum extrinsic transconductance of 190 mS/mm and a maximum current density of 425 mA/mm. The devices showed extremely broad transconductance around its peak. The S-parameter measurements indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. The transconductance versus gate voltage profiles showed a plateau region through a range of 1.7 V supporting spatial confinement of the electrons. These values are among the best reported for delta-doped GaAs-based FET's with a similar device geometry. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | DC AND AC CHARACTERISTICS OF AL0.25GA0.75AS/GAAS QUANTUM-WELL DELTA-DOPED CHANNEL FET GROWN BY LP-MOCVD | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/55.145050 | - |
dc.author.google | JANG, KS | - |
dc.author.google | JEONG, DH | - |
dc.author.google | JEONG, YH | - |
dc.author.google | KIM, B | - |
dc.author.google | LEE, JS | - |
dc.relation.volume | 13 | - |
dc.relation.startpage | 270 | - |
dc.relation.lastpage | 272 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.13, no.5, pp.270 - 272 | - |
dc.identifier.wosid | A1992HQ60500015 | - |
dc.citation.endPage | 272 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 270 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 13 | - |
dc.contributor.affiliatedAuthor | JEONG, YH | - |
dc.contributor.affiliatedAuthor | KIM, B | - |
dc.contributor.affiliatedAuthor | LEE, JS | - |
dc.identifier.scopusid | 2-s2.0-0026869830 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 23 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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