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THE NONCONVENTIONAL LOW-BIAS ANOMALY OF THE SINGLE-ELECTRON DENSITY OF STATES IN DISORDERED INDIUM FILMS SCIE SCOPUS

Title
THE NONCONVENTIONAL LOW-BIAS ANOMALY OF THE SINGLE-ELECTRON DENSITY OF STATES IN DISORDERED INDIUM FILMS
Authors
KIM, JSHIN, HJLEE, HJ
Date Issued
1991-12-01
Publisher
ELSEVIER SCIENCE BV
Abstract
We have measured the single-electron density of states (DOS) of structurally-disordered superconducting indium films with the thickness ranging from 500 angstrom to 3000 angstrom. In spite of the apparent three-dimensionality of the films, the DOS shows a two-dimensional logarithmic singularity at low bias near the Fermi level, in agreement with the recent observation by others in amorphous indium/indium oxide films. The DOS also shows a crossover to a square-root anomaly at even higher bias voltages, the values of the crossover energy, however, are irrelevantly higher than the theoretical predictions.
Keywords
METAL-INSULATOR-TRANSITION
URI
https://oasis.postech.ac.kr/handle/2014.oak/22230
DOI
10.1016/0921-4534(91)91156-X
ISSN
0921-4534
Article Type
Article
Citation
PHYSICA C, vol. 185, page. 2063 - 2064, 1991-12-01
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