THE NONCONVENTIONAL LOW-BIAS ANOMALY OF THE SINGLE-ELECTRON DENSITY OF STATES IN DISORDERED INDIUM FILMS
SCIE
SCOPUS
- Title
- THE NONCONVENTIONAL LOW-BIAS ANOMALY OF THE SINGLE-ELECTRON DENSITY OF STATES IN DISORDERED INDIUM FILMS
- Authors
- KIM, J; SHIN, HJ; LEE, HJ
- Date Issued
- 1991-12-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We have measured the single-electron density of states (DOS) of structurally-disordered superconducting indium films with the thickness ranging from 500 angstrom to 3000 angstrom. In spite of the apparent three-dimensionality of the films, the DOS shows a two-dimensional logarithmic singularity at low bias near the Fermi level, in agreement with the recent observation by others in amorphous indium/indium oxide films. The DOS also shows a crossover to a square-root anomaly at even higher bias voltages, the values of the crossover energy, however, are irrelevantly higher than the theoretical predictions.
- Keywords
- METAL-INSULATOR-TRANSITION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22230
- DOI
- 10.1016/0921-4534(91)91156-X
- ISSN
- 0921-4534
- Article Type
- Article
- Citation
- PHYSICA C, vol. 185, page. 2063 - 2064, 1991-12-01
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- There are no files associated with this item.
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