FLUX-CREEP DISSIPATION IN EPITAXIAL YBA2CU3O7-DELTA FILM - MAGNETIC-FIELD AND ELECTRICAL-CURRENT DEPENDENCE
SCIE
SCOPUS
- Title
- FLUX-CREEP DISSIPATION IN EPITAXIAL YBA2CU3O7-DELTA FILM - MAGNETIC-FIELD AND ELECTRICAL-CURRENT DEPENDENCE
- Authors
- Kim JJ; Lee Hk; CHUNG, JIN WOOK; Shin, HJ; Lee, HJ; KU, JA KANG
- Date Issued
- 1991-02-01
- Publisher
- AMERICAN PHYSICAL SOC
- Abstract
- We have investigated the dissipation characteristics in the mixed state of YBa2Cu3O7- film, grown epitaxially on the SrTiO3(100) substrate, in terms of external transport current as well as magnetic field applied parallel to the c axis of the film. The dissipation fits well the thermally activated flux creep model, R=R0 exp(-U/kBT), where U is a function of electrical current, magnetic field, and temperature. In the range of current density 20"4000 A/cm2, the current dependence of the activation energy U scales with ln(I/I0), as observed recently by Zeldov et al. U shows a power-law dependence on magnetic field as H- with =0.730.002. We obtain the resistance prefactor R0 proportional to the applied magnetic field, provided the Ginzburg-Landau-type magnetic-field suppression of the mean-field transition temperature Tc0 is taken into account. In addition, we present the magnetoresistance at various temperatures below Tc0, in good accordance with the flux-creep model. © 1991 The American Physical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22272
- DOI
- 10.1103/PhysRevB.43.2962
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 43, no. 4, page. 2962 - 2967, 1991-02-01
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.