Analysis and experiment for drain bias dependence of IMD sweet spots in GaNHEMT power amplifier
SCIE
SCOPUS
- Title
- Analysis and experiment for drain bias dependence of IMD sweet spots in GaNHEMT power amplifier
- Authors
- Lee, YS; Lee, MW; Jeong, YH
- Date Issued
- 2008-11
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- In this article, we propose the drain bias dependency on the intermodulation distortion (IMD) sweet spots of a gallium nitride (GaN) high-electron mobility transistors power amplifier (PA). Using the mathematical approach by the I-DS-V-GS, characteristic curves and two-tone distortion products, the positions of the IMD sweet spots according to drain bias as well as gate bias and input power are predicted and well-matched with the measured results. (c) 2008 Wiley Periodicals, Inc.
- Keywords
- drain bias; intermodulation distortion; gallium nitride; power amplifier; sweet spot
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22490
- DOI
- 10.1002/MOP.23863
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 50, no. 11, page. 2836 - 2839, 2008-11
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- There are no files associated with this item.
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