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Analysis and experiment for drain bias dependence of IMD sweet spots in GaNHEMT power amplifier SCIE SCOPUS

Title
Analysis and experiment for drain bias dependence of IMD sweet spots in GaNHEMT power amplifier
Authors
Lee, YSLee, MWJeong, YH
Date Issued
2008-11
Publisher
JOHN WILEY & SONS INC
Abstract
In this article, we propose the drain bias dependency on the intermodulation distortion (IMD) sweet spots of a gallium nitride (GaN) high-electron mobility transistors power amplifier (PA). Using the mathematical approach by the I-DS-V-GS, characteristic curves and two-tone distortion products, the positions of the IMD sweet spots according to drain bias as well as gate bias and input power are predicted and well-matched with the measured results. (c) 2008 Wiley Periodicals, Inc.
Keywords
drain bias; intermodulation distortion; gallium nitride; power amplifier; sweet spot
URI
https://oasis.postech.ac.kr/handle/2014.oak/22490
DOI
10.1002/MOP.23863
ISSN
0895-2477
Article Type
Article
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 50, no. 11, page. 2836 - 2839, 2008-11
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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