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Highly efficient Doherty amplifier based on class-E topology for WCDMA applications SCIE SCOPUS

Title
Highly efficient Doherty amplifier based on class-E topology for WCDMA applications
Authors
Lee, YSLee, MWJeong, YH
Date Issued
2008-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
Abstract
This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the class-E topology for wideband code-division multiple-access (WCDMA) applications. The class-E topology is employed as the carrier and peaking cells of the Doherty configuration. For validations, the proposed DPA is designed and implemented with 25-W GaN HEMTs at 2.14 GHz. For the proposed DPA, the power-added efficiency (PAE) and drain efficiency of 56.1% and 61.2% are achieved at 40 dBm (6-dB backoff power from Psat) for a continuous wave. For a 1-carrier WCDMA signal, the PAE of 44.8% is obtained with an adjacent channel leakage ratio (ACLR) of -31 dBc at 37 dBm, which is an 8.9% improvement over the conventional DPA with an ACLR of -36.4 dBc.
Keywords
adjacent channel leakage ratio (ACLR); class-E power amplifier; Doherty amplifier; efficiency; gallium nitride (GaN); wideband code-division multiple access (WCDMA); POWER-AMPLIFIER
URI
https://oasis.postech.ac.kr/handle/2014.oak/22501
DOI
10.1109/LMWC.2008.2002460
ISSN
1531-1309
Article Type
Article
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 18, no. 9, page. 608 - 610, 2008-09
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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