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  Department of Chemical Engineering (화학공학과) 1. Journal Papers

 

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Cited 81 time in webofscience Cited 88 time in scopus
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dc.contributor.authorHong, K-
dc.contributor.authorYang, SY-
dc.contributor.authorYang, C-
dc.contributor.authorKim, SH-
dc.contributor.authorChoi, D-
dc.contributor.authorPark, CE-
dc.date.accessioned2016-04-01T01:10:59Z-
dc.date.available2016-04-01T01:10:59Z-
dc.date.created2009-03-17-
dc.date.issued2008-10-
dc.identifier.issn1566-1199-
dc.identifier.other2008-OAK-0000008117-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/22518-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.relation.isPartOfORGANIC ELECTRONICS-
dc.subjectorganic transistor-
dc.subjectOFET-
dc.subjectcontact resistance-
dc.subjectinjection barrier-
dc.subjectpentacene-
dc.subjectUPS-
dc.subjectGIXD-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectCHARGE NEUTRALITY LEVEL-
dc.subjectDIPOLE FORMATION-
dc.subjectPENTACENE-
dc.subjectELECTRODES-
dc.subjectBARRIER-
dc.subjectINTERFACES-
dc.subjectCRYSTAL-
dc.subjectMETAL-
dc.subjectGOLD-
dc.titleReducing the contact resistance in organic thin-film transistors by introducing a PEDOT : PSS hole-injection layer-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1016/j.orgel.2008.06.008-
dc.author.googleHong, K-
dc.author.googleYang, SY-
dc.author.googleYang, C-
dc.author.googleKim, SH-
dc.author.googleChoi, D-
dc.author.googlePark, CE-
dc.relation.volume9-
dc.relation.issue5-
dc.relation.startpage864-
dc.relation.lastpage868-
dc.contributor.id10104044-
dc.relation.journalORGANIC ELECTRONICS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationORGANIC ELECTRONICS, v.9, no.5, pp.864 - 868-
dc.identifier.wosid000259133500045-
dc.date.tcdate2019-01-01-
dc.citation.endPage868-
dc.citation.number5-
dc.citation.startPage864-
dc.citation.titleORGANIC ELECTRONICS-
dc.citation.volume9-
dc.contributor.affiliatedAuthorPark, CE-
dc.identifier.scopusid2-s2.0-49049084403-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc61-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusCHARGE NEUTRALITY LEVEL-
dc.subject.keywordPlusDIPOLE FORMATION-
dc.subject.keywordPlusPENTACENE-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusBARRIER-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordPlusCRYSTAL-
dc.subject.keywordPlusMETAL-
dc.subject.keywordPlusGOLD-
dc.subject.keywordAuthororganic transistor-
dc.subject.keywordAuthorOFET-
dc.subject.keywordAuthorcontact resistance-
dc.subject.keywordAuthorinjection barrier-
dc.subject.keywordAuthorpentacene-
dc.subject.keywordAuthorUPS-
dc.subject.keywordAuthorGIXD-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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