DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, D | - |
dc.contributor.author | Baek, S | - |
dc.contributor.author | Ree, M | - |
dc.contributor.author | Kim, O | - |
dc.date.accessioned | 2016-04-01T01:22:19Z | - |
dc.date.available | 2016-04-01T01:22:19Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-04-24 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 2008-OAK-0000007737 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22780 | - |
dc.description.abstract | A resistive switching memory device was fabricated using poly (o-anthranilic acid) (PARA) film. The device has a metal/PARA/metal sandwich-like structure. When the device is biased with voltage beyond a critical value, it suddenly switches from a high resistive state to a low resistive state, with a difference in injection current of more than three orders of magnitude. By controlling the injection current level, it was possible to achieve non-volatile memory behaviour. The devices possess a prolonged retention time of 3 x 10(3) s after switching. The conduction mechanism in the off-state implies that the resistive switching of the device can be explained in terms of. lament theory. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.title | Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film | - |
dc.type | Article | - |
dc.contributor.college | BK분자과학사업단 | - |
dc.identifier.doi | 10.1049/E1:20080326 | - |
dc.author.google | Lee, D | - |
dc.author.google | Baek, S | - |
dc.author.google | Ree, M | - |
dc.author.google | Kim, O | - |
dc.relation.volume | 44 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 596 | - |
dc.relation.lastpage | 597 | - |
dc.contributor.id | 10115761 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.44, no.9, pp.596 - 597 | - |
dc.identifier.wosid | 000255683800024 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 597 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 596 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 44 | - |
dc.contributor.affiliatedAuthor | Ree, M | - |
dc.contributor.affiliatedAuthor | Kim, O | - |
dc.identifier.scopusid | 2-s2.0-42449083659 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 12 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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