Fabrication and characterization of ZnO nanoneedle array using metal organic chemical vapor deposition
SCIE
SCOPUS
- Title
- Fabrication and characterization of ZnO nanoneedle array using metal organic chemical vapor deposition
- Authors
- Park, D; Tak, Y; Yong, K
- Date Issued
- 2008-02
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Abstract
- High density and vertically well-aligned ZnO nanoneedle arrays were fabricated on the ZnO thin film deposited on silicon substrates. The ZnO buffer layer and nanoneedles were synthesized by metal organic chemical vapor deposition using diethylzinc and oxygen gas. The ZnO buffer film was grown at 250 degrees C and the growth temperature of nanoneedles was in the range of 480-500 degrees C. As-grown ZnO nanoneedles showed single crystalline structure of ZnO (002). The crystalline properties of three samples (A: as-deposited ZnO buffer layer, B: annealed buffer film, C: ZnO nanoneedles) were compared using XRD and Raman spectroscopy. The synthesized ZnO nanoneedles (sample C) showed highest crystalline quality among three samples. The field emission properties of ZnO nanoneedles were investigated, which showed low turn on field of 4.8 V mu m(-1) and high field enhancement factor of 3.2 x 10(3).
- Keywords
- ZnO nanoneedle; field emission; MOCVD; ZnO buffer layer; FIELD-EMISSION PROPERTIES; ZINC-OXIDE; OPTICAL-PROPERTIES; ELECTRON-EMISSION; EPITAXIAL-GROWTH; LOW-TEMPERATURE; BUFFER LAYER; NANOWIRES; NANORODS; FILMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22862
- DOI
- 10.1166/jnn.2008.D207
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 8, no. 2, page. 623 - 627, 2008-02
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.