A sub-2 dB NF dual-band CMOS LNA for CDMA/WCDMA applications

Abstract

This letter presents the design and experimental results of a 1.8/2.14 GHz dual-band CMOS low-noise amplifier (LNA), which is usable for code division multiple access and wideband code division multiple access applications. To achieve the narrow-band gain and impedance matching at both bands, an extra capacitor in parallel with the C,, of the main transistor and a harmonic tuned load are switched. Except for the output blocking capacitor and series inductor, all components are integrated on a single-chip. The LNA is designed using a 0.13-mu m CMOS process and employs a supply voltage of 1.5 V and dissipates a de power of 7.5 mW. The measured performances are gains of 14.54 dB and 16.6 dB, and noise figures of 1.75 dB and 1.97 dB at the two frequency bands, respectively. The linearity parameters of P1dB(in) and IIP3 are -16 dBm and -5.8 dBm at the 1.8 GHz, and -14.8 dBm and -5.3 dBm at the 2.14 GHz, respectively.