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Cited 70 time in webofscience Cited 84 time in scopus
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dc.contributor.authorKim, SY-
dc.contributor.authorNam, K-
dc.contributor.authorSong, HS-
dc.contributor.authorKim, HG-
dc.date.accessioned2016-04-01T01:25:00Z-
dc.date.available2016-04-01T01:25:00Z-
dc.date.created2009-03-19-
dc.date.issued2008-03-
dc.identifier.issn0278-0046-
dc.identifier.other2008-OAK-0000007577-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/22880-
dc.description.abstractThe dc-dc converter is a critical component in a hybrid electric vehicle since it supplies power to an electronic control unit, as well as chassis electric components such as power windows, wipers, etc. In this paper, a low-cost diagnostic method for MOSFET faults in a zero-voltage-switching dc-dc converter is proposed. The proposed method utilizes the dc-link current patterns as the signatures of faults of MOSFETs. A presignal processing circuit consists of a peak detector and an integrator circuit. The ratio of peak-to-integral values, which is similar to the crest factor, is useful for diagnosis.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGI-
dc.relation.isPartOfIEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS-
dc.subjectcrest factor-
dc.subjectdc-dc converter-
dc.subjectfault diagnosis-
dc.subjectMOSFET-
dc.subjectNEURAL-NETWORK-
dc.subjectVOLTAGE-
dc.subjectSYSTEMS-
dc.subjectDRIVE-
dc.titleFault diagnosis of a ZVS dc-dc converter based on dc-link current pulse shapes-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/TIE.2007.910627-
dc.author.googleKim, SY-
dc.author.googleNam, K-
dc.author.googleSong, HS-
dc.author.googleKim, HG-
dc.relation.volume55-
dc.relation.issue3-
dc.relation.startpage1491-
dc.relation.lastpage1494-
dc.contributor.id10071835-
dc.relation.journalIEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, v.55, no.3, pp.1491 - 1494-
dc.identifier.wosid000253872900052-
dc.date.tcdate2019-01-01-
dc.citation.endPage1494-
dc.citation.number3-
dc.citation.startPage1491-
dc.citation.titleIEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS-
dc.citation.volume55-
dc.contributor.affiliatedAuthorNam, K-
dc.identifier.scopusid2-s2.0-41349086697-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc40-
dc.type.docTypeArticle-
dc.subject.keywordAuthorcrest factor-
dc.subject.keywordAuthordc-dc converter-
dc.subject.keywordAuthorfault diagnosis-
dc.subject.keywordAuthorMOSFET-
dc.relation.journalWebOfScienceCategoryAutomation & Control Systems-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryInstruments & Instrumentation-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaAutomation & Control Systems-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaInstruments & Instrumentation-

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남광희NAM, KWANG HEE
Dept of Electrical Enginrg
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