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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, GB | - |
| dc.contributor.author | Hong, SH | - |
| dc.contributor.author | Jung, SW | - |
| dc.contributor.author | Kang, HS | - |
| dc.contributor.author | Jeong, YH | - |
| dc.date.accessioned | 2016-04-01T01:25:38Z | - |
| dc.date.available | 2016-04-01T01:25:38Z | - |
| dc.date.created | 2009-08-05 | - |
| dc.date.issued | 2008-03 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.other | 2008-OAK-0000007544 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22904 | - |
| dc.description.abstract | An accurate extraction method for series resistance and capacitance based on RF S-parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method improves the measurement accuracy and significantly reduces the frequency-dependence of capacitance. This method is demonstrated for a 1.5 mn SiO2 dielectric NMOSFET. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.subject | capacitance extraction | - |
| dc.subject | capacitance-voltage (C - V) | - |
| dc.subject | deembedding | - |
| dc.subject | gate leakage | - |
| dc.subject | MOS | - |
| dc.subject | RF | - |
| dc.subject | series resistance | - |
| dc.subject | ultrathin oxide | - |
| dc.subject | DIELECTRICS | - |
| dc.subject | OXIDE | - |
| dc.title | RF capacitance extraction utilizing a series resistance deembedding scheme for ultraleaky MOS devices | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1109/LED.2007.914 | - |
| dc.author.google | Choi, GB | - |
| dc.author.google | Hong, SH | - |
| dc.author.google | Jung, SW | - |
| dc.author.google | Kang, HS | - |
| dc.author.google | Jeong, YH | - |
| dc.relation.volume | 29 | - |
| dc.relation.issue | 3 | - |
| dc.relation.startpage | 238 | - |
| dc.relation.lastpage | 241 | - |
| dc.contributor.id | 10106021 | - |
| dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.29, no.3, pp.238 - 241 | - |
| dc.identifier.wosid | 000253441900011 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 241 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 238 | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 29 | - |
| dc.contributor.affiliatedAuthor | Jeong, YH | - |
| dc.identifier.scopusid | 2-s2.0-40749135507 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 6 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | capacitance extraction | - |
| dc.subject.keywordAuthor | capacitance-voltage (C - V) | - |
| dc.subject.keywordAuthor | deembedding | - |
| dc.subject.keywordAuthor | gate leakage | - |
| dc.subject.keywordAuthor | MOS | - |
| dc.subject.keywordAuthor | RF | - |
| dc.subject.keywordAuthor | series resistance | - |
| dc.subject.keywordAuthor | ultrathin oxide | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg