Article
Cited 9 time in 
Cited 11 time in 
Cited 11 time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, YS | - |
| dc.contributor.author | Lee, MW | - |
| dc.contributor.author | Jeong, YH | - |
| dc.date.accessioned | 2016-04-01T01:26:20Z | - |
| dc.date.available | 2016-04-01T01:26:20Z | - |
| dc.date.created | 2009-08-05 | - |
| dc.date.issued | 2008-03 | - |
| dc.identifier.issn | 0895-2477 | - |
| dc.identifier.other | 2008-OAK-0000007510 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22930 | - |
| dc.description.abstract | Gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty amplifiers with the optimized linearity for wide-build code division multiple access (WCDMA) applications are represented. At a 7-dB back-off output power, the measured single-carrier WCDMA results show two-way and three-way GaN HEMT Doherty amplifiers with an adjacent channel leakage ratio (ACLR) of -43.2 and -48.2 dBc at +/- 2.5 MHz offset frequency with a drain efficiency of 43.1% and 30.9%, respectively. (C) 2008 Wiley Periodicals, Inc. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | JOHN WILEY & SONS INC | - |
| dc.relation.isPartOf | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
| dc.subject | Doherty aniplifier | - |
| dc.subject | efficiency | - |
| dc.subject | gallium nitride | - |
| dc.subject | linearity | - |
| dc.subject | wide-band code division multiple access | - |
| dc.subject | DESIGN | - |
| dc.title | Linearity-optimized GaNHEMT Doherty amplifiers using derivative superposition technique for WCDMA applications | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1002/MOP.23181 | - |
| dc.author.google | Lee, YS | - |
| dc.author.google | Lee, MW | - |
| dc.author.google | Jeong, YH | - |
| dc.relation.volume | 50 | - |
| dc.relation.issue | 3 | - |
| dc.relation.startpage | 701 | - |
| dc.relation.lastpage | 705 | - |
| dc.contributor.id | 10106021 | - |
| dc.relation.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.50, no.3, pp.701 - 705 | - |
| dc.identifier.wosid | 000253106400046 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 705 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 701 | - |
| dc.citation.title | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
| dc.citation.volume | 50 | - |
| dc.contributor.affiliatedAuthor | Jeong, YH | - |
| dc.identifier.scopusid | 2-s2.0-39849101902 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 9 | - |
| dc.description.scptc | 11 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | Doherty aniplifier | - |
| dc.subject.keywordAuthor | efficiency | - |
| dc.subject.keywordAuthor | gallium nitride | - |
| dc.subject.keywordAuthor | linearity | - |
| dc.subject.keywordAuthor | wide-band code division multiple access | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Optics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg