DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, SJ | - |
dc.contributor.author | Kim, WH | - |
dc.contributor.author | Lee, HBR | - |
dc.contributor.author | Maeng, WJ | - |
dc.contributor.author | Kim, H | - |
dc.date.accessioned | 2016-04-01T01:26:31Z | - |
dc.date.available | 2016-04-01T01:26:31Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.other | 2008-OAK-0000007501 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22937 | - |
dc.description.abstract | Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using 02 and ammonia (NH3) plasma, respectively. RUCp2 and Ru(EtCp)(2) were used as Ru precursors. Pure and low resistivity (<20 mu Omega cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaNx, Si, and SiO2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal-oxide-semiconductor (MOS) capacitor composed of p-Si/ALD Ta2O5/ALD Ru (35 nm) was fabricated and C-V measurements were performed for as-deposited sample. Very small hysteresis of 20 mV was obtained, and effective work function difference to Si substrate was minimal as -0.03 V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5 V and flat band voltage (V-FB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process. (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.subject | Ru | - |
dc.subject | atomic layer deposition | - |
dc.subject | nucleation | - |
dc.subject | roughness | - |
dc.subject | C-V measurements | - |
dc.subject | OXIDE THIN-FILMS | - |
dc.subject | DIELECTRIC-CONSTANT | - |
dc.subject | SR)TIO3 CAPACITORS | - |
dc.subject | BOTTOM ELECTRODE | - |
dc.subject | VAPOR-DEPOSITION | - |
dc.subject | RU-ELECTRODES | - |
dc.subject | TA2O5 | - |
dc.subject | OXYGEN | - |
dc.subject | SIO2 | - |
dc.subject | (BA | - |
dc.title | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/j.mee.2007.01.239 | - |
dc.author.google | "Park, SJ | - |
dc.author.google | Kim, WH | - |
dc.author.google | Lee, HBR | - |
dc.author.google | Maeng, WJ | - |
dc.author.google | Kim, H" | - |
dc.relation.volume | 85 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 39 | - |
dc.relation.lastpage | 44 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.85, no.1, pp.39 - 44 | - |
dc.identifier.wosid | 000253030100008 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 44 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 39 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 85 | - |
dc.contributor.affiliatedAuthor | Kim, H | - |
dc.identifier.scopusid | 2-s2.0-36148994309 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 61 | - |
dc.description.scptc | 64 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | RU-ELECTRODES | - |
dc.subject.keywordPlus | TA2O5 | - |
dc.subject.keywordPlus | CAPACITOR | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordPlus | (BA | - |
dc.subject.keywordPlus | CVD | - |
dc.subject.keywordAuthor | Ru | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | nucleation | - |
dc.subject.keywordAuthor | roughness | - |
dc.subject.keywordAuthor | C-V measurements | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
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