Self-organization of ink-jet-printed triisopropylsilylethynyl pentacene via evaporation-induced flows in a drying droplet
SCIE
SCOPUS
- Title
- Self-organization of ink-jet-printed triisopropylsilylethynyl pentacene via evaporation-induced flows in a drying droplet
- Authors
- Lim, JA; Lee, WH; Lee, HS; Lee, JH; Park, YD; Cho, K
- Date Issued
- 2008-01-24
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- We have demonstrated the influence of evaporation-induced flow in a single droplet on the crystalline microstructure and film morphology of an ink-jet-printed organic semiconductor, 6,13-bis((triisopropylsilylethynyl) pentacene (TIPS_PEN), by varying the composition of the solvent mixture. The ringlike deposits induced by outward convective flow in the droplets have a randomly oriented crystalline structure. The addition of dichlorobenzene as an evaporation control agent results in a homogeneous film morphology due to slow evaporation, but the molecular orientation of the film is undesirable in that it is similar to that of the ring-deposited films. However, self-aligned TIPS-PEN crystals with highly ordered crystalline structures were successfully produced when dodecane was added. Dodecane has a high boiling point and a low surface tension, and its addition to the solvent results in a recirculation flow in the droplets that is induced by a Marangoni flow (surface-tension-driven flow), which arises during the drying processes in the direction opposite to the convective flow. The field-effect transistors fabricated with these self-aligned crystals via ink-jet printing exhibit significantly improved performance with an average effective field-effect mobility of 0.12 cm(2) V-1 s(-1). These results demonstrate that with the choice of appropriate solvent ink-jet printing is an excellent method for the production of organic semiconductor films with uniform morphology and desired molecular orientation for the direct-write fabrication of high-performance organic electronics.
- Keywords
- FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; PATTERNS; MOBILITY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22953
- DOI
- 10.1002/adfm.200700859
- ISSN
- 1616-301X
- Article Type
- Article
- Citation
- ADVANCED FUNCTIONAL MATERIALS, vol. 18, no. 2, page. 229 - 234, 2008-01-24
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