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Cited 15 time in webofscience Cited 16 time in scopus
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dc.contributor.authorSong, HJ-
dc.contributor.authorLee, Y-
dc.contributor.authorJiang, T-
dc.contributor.authorKussow, AG-
dc.contributor.authorLee, M-
dc.contributor.authorHong, S-
dc.contributor.authorKwon, YK-
dc.contributor.authorChoi, HC-
dc.date.accessioned2016-04-01T01:28:09Z-
dc.date.available2016-04-01T01:28:09Z-
dc.date.created2009-02-28-
dc.date.issued2008-01-17-
dc.identifier.issn1932-7447-
dc.identifier.other2008-OAK-0000007418-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/22997-
dc.description.abstractGlycines are spontaneously adsorbed to form into self-assembled nanoclutsers on single-walled carbon nanotubes (SWNTs). After formation of glycine nanoclusters on SWNTs, the field effect transistor (FET) devices show selective sensing ability to alcohols, such as isopropyl alcohol (IPA), methanol, and ethanol. Upon the adsorption of alcohol, the glycine-coated SWNT-FET devices exhibit pseudo-metallic transport behaviors, whereas the original and glycine-coated devices display conventional p-type transport characteristics. Computational studies support that the gate field screening effect induced by instantly formed glycine-alcohol pair layers seems to be responsible for the pseudo-metallic transport behavior.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfJOURNAL OF PHYSICAL CHEMISTRY C-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectTOTAL-ENERGY CALCULATIONS-
dc.subjectAB-INITIO CALCULATIONS-
dc.subjectHIGH-PERFORMANCE-
dc.subjectSENSORS-
dc.subjectPSEUDOPOTENTIALS-
dc.subjectDEVICES-
dc.subjectSYSTEMS-
dc.subjectGAS-
dc.titleSelf-clusterized glycines on single-walled carbon nanotubes for alcohol sensing-
dc.typeArticle-
dc.contributor.college화학과-
dc.identifier.doi10.1021/JP077049C-
dc.author.googleSong, HJ-
dc.author.googleLee, Y-
dc.author.googleJiang, T-
dc.author.googleKussow, AG-
dc.author.googleLee, M-
dc.author.googleHong, S-
dc.author.googleKwon, YK-
dc.author.googleChoi, HC-
dc.relation.volume112-
dc.relation.issue2-
dc.relation.startpage629-
dc.relation.lastpage634-
dc.contributor.id10104219-
dc.relation.journalJOURNAL OF PHYSICAL CHEMISTRY C-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.2, pp.629 - 634-
dc.identifier.wosid000252287300040-
dc.date.tcdate2019-01-01-
dc.citation.endPage634-
dc.citation.number2-
dc.citation.startPage629-
dc.citation.titleJOURNAL OF PHYSICAL CHEMISTRY C-
dc.citation.volume112-
dc.contributor.affiliatedAuthorChoi, HC-
dc.identifier.scopusid2-s2.0-38849140968-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc12-
dc.description.scptc14*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTOTAL-ENERGY CALCULATIONS-
dc.subject.keywordPlusAB-INITIO CALCULATIONS-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusSYSTEMS-
dc.subject.keywordPlusGAS-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-

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