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Cited 47 time in webofscience Cited 53 time in scopus
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DC FieldValueLanguage
dc.contributor.authorLee, YS-
dc.contributor.authorLee, MW-
dc.contributor.authorJeong, YH-
dc.date.accessioned2016-04-01T01:28:17Z-
dc.date.available2016-04-01T01:28:17Z-
dc.date.created2009-08-05-
dc.date.issued2008-01-
dc.identifier.issn1531-1309-
dc.identifier.other2008-OAK-0000007411-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/23002-
dc.description.abstractThis letter presents a highly efficient class-F power amplifier (PA) using a GaN high electron mobility transistor, which is designed at WCDMA hand of 2.14 GHz. The simple and effective compensation circuit consisting of a series capacitor and a shunt inductor is used to compensate for the internal parasitic components of the packaged transistor. Also, the composite right/left-handed transmission lines are used as the harmonic tuner of the class-F PA. From the measured results for a continuous wave, the drain efficiency and power-added efficiency of 75.4% and 70.9% with a gain of 12.2 dB are achieved at an output power of 40.2 dBm.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGI-
dc.relation.isPartOfIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.subjectclass-F power amplifier (PA)-
dc.subjectefficiency-
dc.subjectharmonic-
dc.subjecttransmission line (TL)-
dc.subjectPOWER-AMPLIFIERS-
dc.subjectDESIGN-
dc.subjectMODEL-
dc.titleHigh-efficiency class-F GaNHEMT amplifier with simple parasitic-compensation circuit-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/LMWC.2007.912023-
dc.author.googleLee, YS-
dc.author.googleLee, MW-
dc.author.googleJeong, YH-
dc.relation.volume18-
dc.relation.issue1-
dc.relation.startpage55-
dc.relation.lastpage57-
dc.contributor.id10106021-
dc.relation.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.18, no.1, pp.55 - 57-
dc.identifier.wosid000252256600019-
dc.date.tcdate2019-01-01-
dc.citation.endPage57-
dc.citation.number1-
dc.citation.startPage55-
dc.citation.titleIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.citation.volume18-
dc.contributor.affiliatedAuthorJeong, YH-
dc.identifier.scopusid2-s2.0-38149129977-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc29-
dc.type.docTypeArticle-
dc.subject.keywordAuthorclass-F power amplifier (PA)-
dc.subject.keywordAuthorefficiency-
dc.subject.keywordAuthorharmonic-
dc.subject.keywordAuthortransmission line (TL)-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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