Experimental analysis of GaNHEMT and Si LDMOS in analog predistortion power amplifiers for WCDMA applications

Abstract

Comparative analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers (PAs) for WCDMA applications is represented. For validation, GaN HEMT and Si LDMOS PAs are designed and implemented with an analog predistorter, and tested for one-tone and 4-carrier WCDMA signals at 2.14 GHz. The measured results show that the GaN HEMT PA shows better predistortabilhy and more stable temperature and frequency characteristics compared with the Si LDMOS PA. (C) 2007 Wiley Periodicals, Inc.