DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, M | - |
dc.contributor.author | Choi, S | - |
dc.contributor.author | Ree, M | - |
dc.contributor.author | Kim, O | - |
dc.date.accessioned | 2016-04-01T01:30:56Z | - |
dc.date.available | 2016-04-01T01:30:56Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2007-11 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2007-OAK-0000007257 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23102 | - |
dc.description.abstract | In this letter, we investigated the current-dependent switching characteristics of Al/6F-HAB-diphenyl carbamyl (PI-DPC)/Al devices fabricated by spin coating. The current required to switch off the device increased with an increase in the current compliance, limiting the ON-state current, whereas the on and off voltages were almost constant. In addition, the turn-off current and the on and off voltages remained almost constant at the constant current compliance. The observed phenomenon indicates that the bistability of the PI-DPC device that is induced by controlling the current is attributed to filament formation and repulsive Coulomb interaction by charge trapping. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | compliance current | - |
dc.subject | filament | - |
dc.subject | 6F-HAB-diphenyl carbamyl (PI-DPC) | - |
dc.subject | MEMORY DEVICE | - |
dc.title | Current-dependent switching characteristics of PI-diphenyl carbamyl films | - |
dc.type | Article | - |
dc.contributor.college | 화학과 | - |
dc.identifier.doi | 10.1109/LED.2007.906 | - |
dc.author.google | Kim, M | - |
dc.author.google | Choi, S | - |
dc.author.google | Ree, M | - |
dc.author.google | Kim, O | - |
dc.relation.volume | 28 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 967 | - |
dc.relation.lastpage | 969 | - |
dc.contributor.id | 10115761 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.28, no.11, pp.967 - 969 | - |
dc.identifier.wosid | 000250524200011 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 969 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 967 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 28 | - |
dc.contributor.affiliatedAuthor | Ree, M | - |
dc.contributor.affiliatedAuthor | Kim, O | - |
dc.identifier.scopusid | 2-s2.0-36148994388 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 20 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | compliance current | - |
dc.subject.keywordAuthor | filament | - |
dc.subject.keywordAuthor | 6F-HAB-diphenyl carbamyl (PI-DPC) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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