DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, YS | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-04-01T01:34:40Z | - |
dc.date.available | 2016-04-01T01:34:40Z | - |
dc.date.created | 2009-08-05 | - |
dc.date.issued | 2007-08 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.other | 2007-OAK-0000007065 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23241 | - |
dc.description.abstract | This letter reports a high efficiency class-E power amplifier using a GaN high electron mobility transistor (HEMT), which is designed at WCDMA band of 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output network using transmission lines is used. For a single tone, the proposed output network suppresses all harmonic power levels below -60 dBc for the whole output power range. The peak power-added efficiency (PAE) of 70% with a power gain of 13 dB is achieved at an output power of 43 dBm. The broadband performance with a power gain over 12 dB and PAE over 60% is maintained through 200 MHz. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.subject | class-E power amplifier (PA) | - |
dc.subject | gallium nitride (GaN) high electron mobility transistor (HEMT) | - |
dc.subject | harmonic termination | - |
dc.subject | power-added efficiency (PAE) | - |
dc.subject | switching-mode amplifier | - |
dc.title | A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/LMWC.2007.90 | - |
dc.author.google | Lee, YS | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 17 | - |
dc.relation.issue | 8 | - |
dc.relation.startpage | 622 | - |
dc.relation.lastpage | 624 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.17, no.8, pp.622 - 624 | - |
dc.identifier.wosid | 000248520500024 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 624 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 622 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-34547740520 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 49 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | class-E power amplifier (PA) | - |
dc.subject.keywordAuthor | gallium nitride (GaN) high electron mobility transistor (HEMT) | - |
dc.subject.keywordAuthor | harmonic termination | - |
dc.subject.keywordAuthor | power-added efficiency (PAE) | - |
dc.subject.keywordAuthor | switching-mode amplifier | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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