Composition ffnhomogeneity and structural defects in czochralsi grown GexSi1-x solid solution crystals

Abstract

The relationship between the plastic strain and the inhomogeneity of germanium distribution in single crystals of GexSi1 (-x) (x = 4-9 at %) solid solutions grown using the Czochralski method has been studied. It is established that plastic straining develops via the nucleation of dislocations at their sources occurring in the Ge segregation bands, while the inhomogeneous profile of Ge distribution across the growth direction is caused by thermoelastic stresses.