Enhancement of hole injection in organic TFTs by ozone treatment of indium tin oxide electrodes

Abstract

Indium tin oxide electrodes of polymer thin-film transistors (TFTs) were treated with ozone, with the aim of enhancing their hole injection properties. Synchrotron radiation photoelectron spectroscopy results showed that the ozone treatment of the electrodes resulted in an increase in their work function by about 0.4 eV. This increase was found to lower the hole injection barrier and produce an increase in the field-effect mobility.