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Cited 22 time in webofscience Cited 23 time in scopus
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dc.contributor.authorYang, SY-
dc.contributor.authorShin, K-
dc.contributor.authorKim, SH-
dc.contributor.authorJeon, H-
dc.contributor.authorKang, JH-
dc.contributor.authorYang, HC-
dc.contributor.authorPark, CE-
dc.date.accessioned2016-04-01T01:49:19Z-
dc.date.available2016-04-01T01:49:19Z-
dc.date.created2009-03-17-
dc.date.issued2006-10-19-
dc.identifier.issn1520-6106-
dc.identifier.other2006-OAK-0000006291-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/23778-
dc.description.abstractThe role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfJOURNAL OF PHYSICAL CHEMISTRY B-
dc.subjectATOMIC-FORCE MICROSCOPY-
dc.subjectTRANSISTORS-
dc.subjectTRANSPORT-
dc.subjectMORPHOLOGY-
dc.subjectMOBILITY-
dc.subjectGROWTH-
dc.subjectMONOLAYER-
dc.subjectOXIDE-
dc.titleEnhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1021/JP0646527-
dc.author.googleYang, SY-
dc.author.googleShin, K-
dc.author.googleKim, SH-
dc.author.googleJeon, H-
dc.author.googleKang, JH-
dc.author.googleYang, HC-
dc.author.googlePark, CE-
dc.relation.volume110-
dc.relation.issue41-
dc.relation.startpage20302-
dc.relation.lastpage20307-
dc.contributor.id10104044-
dc.relation.journalJOURNAL OF PHYSICAL CHEMISTRY B-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICAL CHEMISTRY B, v.110, no.41, pp.20302 - 20307-
dc.identifier.wosid000241192200039-
dc.date.tcdate2019-01-01-
dc.citation.endPage20307-
dc.citation.number41-
dc.citation.startPage20302-
dc.citation.titleJOURNAL OF PHYSICAL CHEMISTRY B-
dc.citation.volume110-
dc.contributor.affiliatedAuthorPark, CE-
dc.identifier.scopusid2-s2.0-33751286973-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc22-
dc.description.scptc21*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusATOMIC-FORCE MICROSCOPY-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusMORPHOLOGY-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMONOLAYER-
dc.subject.keywordPlusOXIDE-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-

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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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