Enhancement of interconnectivity in the channels of pentacene thin-film transistors and its effect on field-effect mobility
SCIE
SCOPUS
- Title
- Enhancement of interconnectivity in the channels of pentacene thin-film transistors and its effect on field-effect mobility
- Authors
- Lee, HS; Kim, DH; Cho, JH; Park, YD; Kim, JS; Cho, K
- Date Issued
- 2006-09-18
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- With the aim of improving the field-effect mobility of transistors by promoting the interconnectivity of the grains in pentacene thin films, deposition conditions of the pentacene molecules using one-step (total thickness of layer 50 nm: 0.1 angstrom s(-1)) and twostep (first layer 10 nm: 0.1 angstrom s(-1), second layer 40 nm: 4.0 angstrom s(-1)) depositions are controlled. Significantly, it is found that the continuities of the pentacene thin films vary with the deposition conditions of the pentacene molecules. Specifically, a smaller number of voids is observed at the interface for the two-step deposition, which results in field-effect mobilities as high as 1.2 cm(2) V(-1)s(-1); these are higher by more than a factor of two than those of the pentacene films deposited in one step. This remarkable increase in field-effect mobility is due in particular to the interconnectivity of the pentacene grains near the insulator substrate.
- Keywords
- SELF-ASSEMBLED MONOLAYERS; DIELECTRIC-CONSTANT; ORGANIC TRANSISTORS; EPITAXIAL-GROWTH; SEXITHIOPHENE; TRANSPORT; SURFACE; IDENTIFICATION; POLYMORPHISM; PERFORMANCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23789
- DOI
- 10.1002/adfm.200500854
- ISSN
- 1616-301X
- Article Type
- Article
- Citation
- ADVANCED FUNCTIONAL MATERIALS, vol. 16, no. 14, page. 1859 - 1864, 2006-09-18
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