DC Field | Value | Language |
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dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Lee, CH | - |
dc.contributor.author | Kim, DW | - |
dc.contributor.author | Yi, GC | - |
dc.date.accessioned | 2016-04-01T01:54:43Z | - |
dc.date.available | 2016-04-01T01:54:43Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2006-06-14 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.other | 2006-OAK-0000005993 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23982 | - |
dc.description.abstract | We fabricated dual-gate ZnO nanorod metal - oxide semiconductor field-effect transistors(MOSFETs) where a Si substrate with a 200 nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100 nm thick SiO2 layer was used as a top-gate. From current - voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (10(5) - 10(7)) was at least one order of magnitude larger than that of the bottom-gate mode (10(4) - 10(6)). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34 mu S mu m(-1) for the bottom-gate to 2.4 mu S mu m(-1) for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.subject | NANOWIRE TRANSISTORS | - |
dc.subject | DIELECTRICS | - |
dc.subject | CHANNEL | - |
dc.subject | GAN | - |
dc.title | Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1088/0957-4484/17/11/S16 | - |
dc.author.google | Kim, HJ | - |
dc.author.google | Lee, CH | - |
dc.author.google | Kim, DW | - |
dc.author.google | Yi, GC | - |
dc.relation.volume | 17 | - |
dc.relation.issue | 11 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.17, no.11, pp.S327 - S331 | - |
dc.identifier.wosid | 000238250300017 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | S331 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | S327 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.identifier.scopusid | 2-s2.0-33744515172 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 58 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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