Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors
SCIE
SCOPUS
- Title
- Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors
- Authors
- Kim, HJ; Lee, CH; Kim, DW; Yi, GC
- Date Issued
- 2006-06-14
- Publisher
- IOP PUBLISHING LTD
- Abstract
- We fabricated dual-gate ZnO nanorod metal - oxide semiconductor field-effect transistors(MOSFETs) where a Si substrate with a 200 nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100 nm thick SiO2 layer was used as a top-gate. From current - voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (10(5) - 10(7)) was at least one order of magnitude larger than that of the bottom-gate mode (10(4) - 10(6)). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34 mu S mu m(-1) for the bottom-gate to 2.4 mu S mu m(-1) for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry.
- Keywords
- NANOWIRE TRANSISTORS; DIELECTRICS; CHANNEL; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23982
- DOI
- 10.1088/0957-4484/17/11/S16
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 17, no. 11, page. S327 - S331, 2006-06-14
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.