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Ge and GaK-edge EXAFS analyses on the structure of Ge-Ga-S-CsBr glasses SCIE SCOPUS
- Title
- Ge and GaK-edge EXAFS analyses on the structure of Ge-Ga-S-CsBr glasses
- Date Issued
- 2006-05-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- The local structure of Ge and Ga ions in (1 - x)(Ge0.25Ga0.10S0.65)-xCsBr glasses (x = 0.00, 0.05, 0.10 and 0.12) were investigated using extended X-ray absorption fine structure (EXAFS) spectroscopy. CsBr formed [GaS3/2Br]- structural units in glass while Ge ions remained in GeS4/2 tetrahedra, unaffected by CsBr addition. Rare-earth ions can be surrounded by Br ions only when CsBr/Ga ratio in glass became larger than unity. (c) 2006 Elsevier B.V. All rights reserved.
- Keywords
- chalcohalides; short-range order; X-ray absorption; ABSORPTION FINE-STRUCTURE; EMISSION PROPERTIES; SULFIDE GLASSES; RAMAN; DIFFRACTION; SPECTROSCOPY; TEMPERATURE; MECHANISM; TM3+
- ISSN
- 0022-3093
- Article Type
- Article
- Citation
- JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 352, no. 5, page. 423 - 428, 2006-05-01
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Related Researcher
- 허종HEO, JONG
- Div. of Advanced Nuclear Enginrg