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Cited 12 time in webofscience Cited 15 time in scopus
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dc.contributor.authorYun, SJ-
dc.contributor.authorLee, G-
dc.contributor.authorKim, JS-
dc.contributor.authorShin, SK-
dc.contributor.authorYoon, YG-
dc.date.accessioned2016-04-01T02:00:10Z-
dc.date.available2016-04-01T02:00:10Z-
dc.date.created2009-02-28-
dc.date.issued2006-02-
dc.identifier.issn0038-1098-
dc.identifier.other2006-OAK-0000005701-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/24191-
dc.description.abstractUsing the first-principles methods we compute the electronic structure and the absorption spectra for a wurtzite CdSe (0001) slab covered with zincblende ZnSe and ZnS epilayers. For each structure we compute the DOS and the imaginary part of the dielectric function. We find that the semiconductor passivation shifts the 'near Fermi-level' states of the bare CdSe slab down to lower energy levels. The migration suggests the decrease of surface effects and energy loss. We observe the substantial reduction of the abnormal peaks in the absorption spectra of the bare CdSe slab, which seems to be a consequence of the DOS migration. This is consistent with the experimental results that a proper passivation enhance the luminescence efficiency. We also study the case that the epilayer surface is terminated with PH3 and find the PH3 passivation also reduces the surface state to some extent. (c) 2005 Elsevier Ltd. All rights reserved.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.relation.isPartOfSOLID STATE COMMUNICATIONS-
dc.subjectCdSe-
dc.subjectZnSe-
dc.subjectZnS-
dc.subjectelectronic structure-
dc.subjectoptical absorption-
dc.subjectPARTICLE ENERGY CALCULATIONS-
dc.subjectBRILLOUIN-ZONE INTEGRATIONS-
dc.subjectAB-INITIO CALCULATIONS-
dc.subjectLIGHT-EMITTING-DIODES-
dc.subjectAUGMENTED-WAVE METHOD-
dc.subjectII-VI SEMICONDUCTORS-
dc.subjectZINCBLENDE SEMICONDUCTORS-
dc.subjectSURFACE RECONSTRUCTION-
dc.subjectMOLECULAR-DYNAMICS-
dc.subjectWURTZITE-STRUCTURE-
dc.titleElectronic structure and optical absorption spectra of CdSe covered with ZnSe and ZnS epilayers-
dc.typeArticle-
dc.contributor.college화학과-
dc.identifier.doi10.1016/j.ssc.2005.10.029-
dc.author.googleYun, SJ-
dc.author.googleLee, G-
dc.author.googleKim, JS-
dc.author.googleShin, SK-
dc.author.googleYoon, YG-
dc.relation.volume137-
dc.relation.issue6-
dc.relation.startpage332-
dc.relation.lastpage337-
dc.contributor.id10200277-
dc.relation.journalSOLID STATE COMMUNICATIONS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationSOLID STATE COMMUNICATIONS, v.137, no.6, pp.332 - 337-
dc.identifier.wosid000235426400011-
dc.date.tcdate2019-01-01-
dc.citation.endPage337-
dc.citation.number6-
dc.citation.startPage332-
dc.citation.titleSOLID STATE COMMUNICATIONS-
dc.citation.volume137-
dc.contributor.affiliatedAuthorKim, JS-
dc.contributor.affiliatedAuthorShin, SK-
dc.identifier.scopusid2-s2.0-31444453474-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc8-
dc.type.docTypeArticle-
dc.subject.keywordPlusPARTICLE ENERGY CALCULATIONS-
dc.subject.keywordPlusAB-INITIO CALCULATIONS-
dc.subject.keywordPlusZINCBLENDE SEMICONDUCTORS-
dc.subject.keywordPlusSURFACE RECONSTRUCTION-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlus1ST-PRINCIPLES-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusDYNAMICS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordAuthorCdSe-
dc.subject.keywordAuthorZnSe-
dc.subject.keywordAuthorZnS-
dc.subject.keywordAuthorelectronic structure-
dc.subject.keywordAuthoroptical absorption-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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