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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Baek, CH | - |
| dc.contributor.author | Oh, TK | - |
| dc.contributor.author | Kang, BK | - |
| dc.date.accessioned | 2016-04-01T02:04:49Z | - |
| dc.date.available | 2016-04-01T02:04:49Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2005-08 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.other | 2005-OAK-0000005437 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24369 | - |
| dc.description.abstract | This paper presents the effect of surface treatment on the electrical properties of an AlGaAs/GaAs heterojunction bipolar transistor (HBT). The extrinsic base surface of the HBT was treated in sequence with a (NH4)(2)S-x:H2O = 1:1 solution, H-2 plasma, and NH3 plasma. The treated HBT had a lower surface recombination current, base resistance, and low-frequency base current noise than the untreated HBT. These values decreased by 32%, 42%, and similar to 3 dB, respectively. Because of the reduced base resistance, the maximum frequency of oscillation f(max), which was 40.3 GHz without surface treatment, improved to 57.8 GHz. (c) 2005 Elsevier Ltd. All rights reserved. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
| dc.subject | surface treatment | - |
| dc.subject | heterojunction bipolar transistor | - |
| dc.subject | ideality factor | - |
| dc.subject | 1/f noise | - |
| dc.subject | maximum oscillation frequency | - |
| dc.subject | EQUIVALENT-CIRCUIT | - |
| dc.subject | CURRENT GAIN | - |
| dc.subject | PASSIVATION LAYER | - |
| dc.subject | EXTRACTION | - |
| dc.subject | GAAS | - |
| dc.subject | HBTS | - |
| dc.title | Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1016/J.SSE.2005.0 | - |
| dc.author.google | Baek, CH | - |
| dc.author.google | Oh, TK | - |
| dc.author.google | Kang, BK | - |
| dc.relation.volume | 49 | - |
| dc.relation.issue | 8 | - |
| dc.relation.startpage | 1335 | - |
| dc.relation.lastpage | 1340 | - |
| dc.contributor.id | 10071834 | - |
| dc.relation.journal | SOLID-STATE ELECTRONICS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.49, no.8, pp.1335 - 1340 | - |
| dc.identifier.wosid | 000232269600013 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 1340 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 1335 | - |
| dc.citation.title | SOLID-STATE ELECTRONICS | - |
| dc.citation.volume | 49 | - |
| dc.contributor.affiliatedAuthor | Kang, BK | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 3 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | EQUIVALENT-CIRCUIT | - |
| dc.subject.keywordPlus | CURRENT GAIN | - |
| dc.subject.keywordPlus | PASSIVATION LAYER | - |
| dc.subject.keywordPlus | EXTRACTION | - |
| dc.subject.keywordPlus | GAAS | - |
| dc.subject.keywordPlus | HBTS | - |
| dc.subject.keywordAuthor | surface treatment | - |
| dc.subject.keywordAuthor | heterojunction bipolar transistor | - |
| dc.subject.keywordAuthor | ideality factor | - |
| dc.subject.keywordAuthor | 1/f noise | - |
| dc.subject.keywordAuthor | maximum oscillation frequency | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
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- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg