DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, SH | - |
dc.contributor.author | Shin, JC | - |
dc.contributor.author | Song, JD | - |
dc.contributor.author | Choi, WJ | - |
dc.contributor.author | Lee, JI | - |
dc.contributor.author | Han, H | - |
dc.contributor.author | Lee, SW | - |
dc.date.accessioned | 2016-04-01T02:05:18Z | - |
dc.date.available | 2016-04-01T02:05:18Z | - |
dc.date.created | 2009-08-20 | - |
dc.date.issued | 2005-07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2005-OAK-0000005417 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24387 | - |
dc.description.abstract | We investigated the device performances for a post-growth thermally. treated In(0.5)Ga(0.5)As/GaAs quantum-dot infrared detector (QDIP). Device characteristics, such as dark current, photoluminescence (PL), and photocurrent spectra, have been studied and compared for the as-grown and thermally treated QDIPs. After the thermal treatment with a SiO(2) capping layer, the dark current was increased, the PL peak position was blue-shifted, and the detection wavelength was redshifted due to In/Ga interdiffusion in the quantum dot (QD) structure. Furthermore, the activation energies estimated from the integrated PL intensities agreed well with the peak positions of the photocurrent spectra. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.subject | quantum-dot infrared photodetector | - |
dc.subject | thermal treatment | - |
dc.subject | HIGH-TEMPERATURE | - |
dc.subject | BLOCKING LAYER | - |
dc.subject | WAVELENGTH | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | PHOTOCONDUCTIVITY | - |
dc.subject | INGAAS/GAAS | - |
dc.subject | WELLS | - |
dc.title | Characteristics of thermally treated quantum-dot infrared photodetector | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1143/JJAP.44.5696 | - |
dc.author.google | Hwang, SH | - |
dc.author.google | Shin, JC | - |
dc.author.google | Song, JD | - |
dc.author.google | Choi, WJ | - |
dc.author.google | Lee, JI | - |
dc.author.google | Han, H | - |
dc.author.google | Lee, SW | - |
dc.relation.volume | 44 | - |
dc.relation.issue | 7B | - |
dc.relation.startpage | 5696 | - |
dc.relation.lastpage | 5699 | - |
dc.contributor.id | 10056174 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.7B, pp.5696 - 5699 | - |
dc.identifier.wosid | 000232029300086 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 5699 | - |
dc.citation.number | 7B | - |
dc.citation.startPage | 5696 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.volume | 44 | - |
dc.contributor.affiliatedAuthor | Han, H | - |
dc.identifier.scopusid | 2-s2.0-31844449135 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | HIGH-TEMPERATURE | - |
dc.subject.keywordPlus | BLOCKING LAYER | - |
dc.subject.keywordPlus | WAVELENGTH | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | PHOTOCONDUCTIVITY | - |
dc.subject.keywordPlus | INGAAS/GAAS | - |
dc.subject.keywordPlus | WELLS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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