Solvent vapor-induced nanowire formation in poly(3-hexylthiophene) thin films
SCIE
SCOPUS
- Title
- Solvent vapor-induced nanowire formation in poly(3-hexylthiophene) thin films
- Authors
- Kim, DH; Park, YD; Jang, Y; Kim, S; Cho, K
- Date Issued
- 2005-05-19
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- Nanowire lengths and length-to-width aspect ratios in regioregular poly(3-hexylthiophene) (P3HT) were simply controlled through changes in the solvent vapor pressure during solidification. It is demonstrated that the nanowires grew by rod-to-rod association, in which the molecular long axis of the P3HT chains appeared to be well-oriented parallel to the silicon substrate (Si/SiOx). The formation of the nanowires took place by one dimensional self-assembly, governed by pi-pi stacking of the P3HT units.
- Keywords
- nanowire; organic field-effect transistors; polythiophene; self-assembly; solvent vapor; FIELD-EFFECT MOBILITY; REGIOREGULAR POLYTHIOPHENE; CONDUCTING POLYMERS; CONJUGATED POLYMER; EFFECT TRANSISTOR; POLY(3-ALKYLTHIOPHENES); ORGANIZATION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24579
- DOI
- 10.1002/marc.200400647
- ISSN
- 1022-1336
- Article Type
- Article
- Citation
- MACROMOLECULAR RAPID COMMUNICATIONS, vol. 26, no. 10, page. 834 - 839, 2005-05-19
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