Doping of Si into GaN nanowires and optical properties of resulting composites

Abstract

Doping of Si into GaN nanowires has been successfully attained via thermal evaporation in the presence of a suitable gas atmosphere. Analysis indicated that the Si-cloped GaN nanowire is a single crystal with a hexagonal wurtzite structure, containing 2.2 atom % of Si. The broadening and the shift of Raman peak to lower frequency are observed, which may be attributed to surface disorder and various strengths of the stress. The band-gap emission (358 nm) of Si-cloped GaN nanowires relative to that (370 nm) of GaN nanowires has an apparent blue shift (-12 nm), which can be ascribed to doping impurity Si.