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Cited 744 time in webofscience Cited 0 time in scopus
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dc.contributor.authorYi, GC-
dc.contributor.authorWang, CR-
dc.contributor.authorPark, WI-
dc.date.accessioned2016-04-01T02:11:22Z-
dc.date.available2016-04-01T02:11:22Z-
dc.date.created2009-02-28-
dc.date.issued2005-04-
dc.identifier.issn0268-1242-
dc.identifier.other2005-OAK-0000005084-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/24616-
dc.description.abstractThis paper presents a review of current research activities on ZnO nanorods (or nanowires). We begin this paper with a variety of physical and chemical methods that have been used to synthesize ZnO nanorods (or nanowires). There follows a discussion of techniques for fabricating aligned arrays, heterostructures and doping of ZnO nanorods. At the end of this paper, we discuss a wide range of interesting properties such as luminescence, field emission, gas sensing and electron transport, associated with ZnO nanorods, as well as various intriguing applications. We conclude with personal remarks on the outlook for research on ZnO nanorods.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectZINC-OXIDE NANOWIRES-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectPHASE EPITAXIAL-GROWTH-
dc.subjectLOW-TEMPERATURE GROWTH-
dc.subjectLIQUID-SOLID PROCESS-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectTHIN-FILMS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectEMISSION PROPERTIES-
dc.titleZnO nanorods: synthesis, characterization and applications-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1088/0268-1242/20-
dc.author.googleYi, GC-
dc.author.googleWang, CR-
dc.author.googlePark, WI-
dc.relation.volume20-
dc.relation.issue4-
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.20, no.4, pp.S22 - S34-
dc.identifier.wosid000228840900004-
dc.date.tcdate2019-02-01-
dc.citation.endPageS34-
dc.citation.number4-
dc.citation.startPageS22-
dc.citation.titleSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.citation.volume20-
dc.contributor.affiliatedAuthorYi, GC-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc529-
dc.type.docTypeReview-
dc.subject.keywordPlusZINC-OXIDE NANOWIRES-
dc.subject.keywordPlusPHASE EPITAXIAL-GROWTH-
dc.subject.keywordPlusLOW-TEMPERATURE GROWTH-
dc.subject.keywordPlusFIELD-EMISSION-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusCATALYTIC GROWTH-
dc.subject.keywordPlusLASER-ABLATION-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusII-VI-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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