Modulation of superconductivity by Si+ implantation in Bi2212 single crystals

Abstract

The multiple quasiparticle tunnelling branches with large hysteresis were measured on the mesas of Si+ implanted Bi2Sr2CaCu2O8+x single crystals. For given Si+ dosage the tunnelling critical current I-C decreased for junctions located closer to the mesa surface; meanwhile the voltage interval between the neighboring quasiparticle branches decreased with increasing the Si+ dosage.