DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baik, JM | - |
dc.contributor.author | Kim, SU | - |
dc.contributor.author | Koo, YM | - |
dc.contributor.author | Kang, TW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-04-01T02:12:00Z | - |
dc.date.available | 2016-04-01T02:12:00Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-01 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.other | 2005-OAK-0000005051 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24640 | - |
dc.description.abstract | The local structure of Mn impurities in a ferromagnetic (Ga, Mn)N semiconductor was investigated using extended X-ray absorption fine structure (EXAFS). The ferromagnetic signal increased and maintained up to room temperature as N ions were implanted into Mn-implanted GaN. The X-ray results showed that Mn ions occupied Ga sites to form (Ga, Mn) N semiconductor. The Mn concentration occupying Ga sites increased from 2.5 to 3.8% and the formation of Mn-N compounds such as Mn6N2.58 and Mn3N2 was prohibited by implanting N atoms. As a result, the N-vacancies reduced and net hole concentration increased, resulting in the enhancement of ferromagnetic property. (C) 2004 The Electrochemical Society. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.title | Evidence of mn occupation of Ga site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFS | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1149/1.1813365 | - |
dc.author.google | Baik, JM | - |
dc.author.google | Kim, SU | - |
dc.author.google | Koo, YM | - |
dc.author.google | Kang, TW | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 7 | - |
dc.relation.issue | 12 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.12, pp.G313 - G315 | - |
dc.identifier.wosid | 000228540700035 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | G315 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | G313 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Koo, YM | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-11144311042 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | (GA,MN)N | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GAMNN | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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