The use of diffraction and phase X-ray contrast in study of materials

Abstract

Some examples illustrating the application of the methods of obtaining images in synchrotron X-ray radiation for studying defects in the materials used in electronics are considered. It is shown that the combined use of the methods based on the Bragg and Fresnel diffraction (topography and phase-sensitive radiography) is rather efficient for studying the boundaries of inclusions of foreign polytypes in silicon carbide single crystals, interfaces in structures formed as a result of direct silicon intergrowth, and crystal-seed interfaces in synthetic quartz. The results obtained lead to the conclusion that comparative analysis of the diffraction and phase contrast in the corresponding images may give the richest information on the defects and inhomogeneities in the structures. (C) 2004 MAIK "Nauka/Interperiodica".