Growth and characterization of silicon carbide nanowires
SCIE
SCOPUS
- Title
- Growth and characterization of silicon carbide nanowires
- Authors
- Park, BT; Ryu, YW; Yong, KJ
- Date Issued
- 2004-08
- Publisher
- WORLD SCIENTIFIC PUBL CO PTE LTD
- Abstract
- A simple, direct synthesis method was used to grow the core-shell SiC-SiOx nanowires by heating the NiO catalyzed silicon substrate. The carbothermal reduction of WO3 by C provided a reductive environment to synthesize the crystalline SiC nanowires covered with the SiOx sheath in the growth temperature of 1000-1100degreesC. After hydrofluoric acid (HF) etching, the cubic beta-SiC nanowires were extracted from the core-shell nanowires in large quantities. A solid-liquid-solid (SLS) mechanism was proposed for the growth of the core-shell SiC-SiOx nanowires.
- Keywords
- low dimensional structures; nanowires; growth models; SiC; INFRARED-SPECTROSCOPY; HYDROGEN TERMINATION; SURFACE; PHOTOLUMINESCENCE; CARBON; OXIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24869
- DOI
- 10.1142/S0218625X04006311
- ISSN
- 0218-625X
- Article Type
- Article
- Citation
- SURFACE REVIEW AND LETTERS, vol. 11, no. 4-5, page. 373 - 378, 2004-08
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