DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, WI | - |
dc.contributor.author | Kim, JS | - |
dc.contributor.author | Yi, GC | - |
dc.contributor.author | Bae, MH | - |
dc.contributor.author | Lee, HJ | - |
dc.date.accessioned | 2016-04-01T02:19:25Z | - |
dc.date.available | 2016-04-01T02:19:25Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-11-22 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2004-OAK-0000004692 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24913 | - |
dc.description.abstract | We report on fabrication and electrical characteristics of high-mobility field-effect transistors (FETs) using ZnO nanorods. For FET fabrications, single-crystal ZnO nanorods were prepared using catalyst-free metalorganic vapor phase epitaxy. Although typical ZnO nanorod FETs exhibited good electrical characteristics, with a transconductance of similar to140 nS and a mobility of 75 cm(2)/V s, the device characteristics were significantly improved by coating a polyimide thin layer on the nanorod surface, exhibiting a large turn-ON/OFF ratio of 10(4)-10(5), a high transconductance of 1.9 muS, and high electron mobility above 1000 cm(2)/V s. The role of the polymer coating in the enhancement of the devices is also discussed. (C) 2004 American Institute of Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1063/1.1821648 | - |
dc.author.google | Park, WI | - |
dc.author.google | Kim, JS | - |
dc.author.google | Yi, GC | - |
dc.author.google | Bae, MH | - |
dc.author.google | Lee, HJ | - |
dc.relation.volume | 85 | - |
dc.relation.issue | 21 | - |
dc.relation.startpage | 5052 | - |
dc.relation.lastpage | 5054 | - |
dc.contributor.id | 10080084 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.85, no.21, pp.5052 - 5054 | - |
dc.identifier.wosid | 000225300600075 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 5054 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 5052 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 85 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.contributor.affiliatedAuthor | Lee, HJ | - |
dc.identifier.scopusid | 2-s2.0-17044428578 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 333 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | DC | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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