On-Nanowire Band-Graded Si:Ge Photodetectors

Abstract

An on‐nanowire (on‐NW) band‐graded photodetector that pertains to the on‐nanowire composition gradation from pure Si to pure Ge, Si1–xGex (0 ≤ x ≤ 1), is reported. The spectral onset of interband photocarrier generation and photocurrent amplitude are on‐NW de‐multiflexed over the continuously varying energy band gap and surface trap state density in an individually addressable manner.