On-Nanowire Band-Graded Si:Ge Photodetectors
SCIE
SCOPUS
- Title
- On-Nanowire Band-Graded Si:Ge Photodetectors
- Authors
- Kim, CJ; Lee, HS; Cho, YJ; Yang, JE; Lee, RR; Lee, JK; Jo, MH
- Date Issued
- 2011-02-22
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- An on‐nanowire (on‐NW) band‐graded photodetector that pertains to the on‐nanowire composition gradation from pure Si to pure Ge, Si1–xGex (0 ≤ x ≤ 1), is reported. The spectral onset of interband photocarrier generation and photocurrent amplitude are on‐NW de‐multiflexed over the continuously varying energy band gap and surface trap state density in an individually addressable manner.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24949
- DOI
- 10.1002/ADMA.201004034
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 23, no. 8, page. 1025 - 1029, 2011-02-22
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- There are no files associated with this item.
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