DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, E | - |
dc.contributor.author | Jung, SH | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Cho, S | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Lee, BR | - |
dc.contributor.author | Lee, KH | - |
dc.contributor.author | Song, KH | - |
dc.contributor.author | Choi, CH | - |
dc.contributor.author | Han, DS | - |
dc.date.accessioned | 2016-04-01T02:21:10Z | - |
dc.date.available | 2016-04-01T02:21:10Z | - |
dc.date.created | 2011-03-28 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2011-OAK-0000023114 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24966 | - |
dc.description.abstract | We report a facile and novel method for the selective growth of SiC and SiOx nanowires by direct microwave irradiation on a Si substrate under atmospheric pressure. Selective synthesis of the amorphous SiOx or crystalline SiC nanowires was achieved by varying the gas composition in the reactor. The proposed method requires a short reaction time (2 min) with no need for vacuum equipment because the reaction is carried out under atmospheric pressure. High-resolution transmission electron microscope images revealed that the SiOx nanowires were amorphous and that the SiC nanowires were crystalline. Raman spectra showed features typical of nano-sized SiC. On the basis of our results, we propose a growth mechanism of SiC and SiOx nanowires synthesized by direct microwave irradiation. (C) 2011 The Japan Society of Applied Physics | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.subject | SILICON-CARBIDE NANOWIRES | - |
dc.subject | THIN-FILMS | - |
dc.subject | FABRICATION | - |
dc.subject | DEPOSITION | - |
dc.subject | GROWTH | - |
dc.subject | NANOTUBES | - |
dc.subject | CERAMICS | - |
dc.subject | ARRAYS | - |
dc.title | Selective Synthesis of SiC and SiOx Nanowires by Direct Microwave Irradiation | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1143/JJAP.50.025001 | - |
dc.author.google | Oh, E | - |
dc.author.google | Jung, SH | - |
dc.author.google | Lee, J | - |
dc.author.google | Cho, S | - |
dc.author.google | Kim, HJ | - |
dc.author.google | Lee, BR | - |
dc.author.google | Lee, KH | - |
dc.author.google | Song, KH | - |
dc.author.google | Choi, CH | - |
dc.author.google | Han, DS | - |
dc.relation.volume | 50 | - |
dc.relation.issue | 2 | - |
dc.contributor.id | 10053544 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.2 | - |
dc.identifier.wosid | 000287525300044 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 2 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.contributor.affiliatedAuthor | Lee, KH | - |
dc.identifier.scopusid | 2-s2.0-79951965430 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 4 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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