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Cited 124 time in webofscience Cited 146 time in scopus
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dc.contributor.authorLee, SK-
dc.contributor.authorPark, SJ-
dc.contributor.authorPark, HJ-
dc.contributor.authorSim, JY-
dc.date.accessioned2016-04-01T02:21:16Z-
dc.date.available2016-04-01T02:21:16Z-
dc.date.created2011-03-28-
dc.date.issued2011-03-
dc.identifier.issn0018-9200-
dc.identifier.other2011-OAK-0000023104-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/24969-
dc.description.abstractThis paper presents a 100 kS/s, 1.3 mu W, 9.3 ENOB successive approximation ADC with a time-domain comparator. The proposed time-domain comparator utilizes a differential multi-stage VCDL, resulting in a highly digital operation eliminating static power consumption. The effects of gain, noise, and offset are also investigated by detailed analysis which proves the feature of reducing the input-referred noise and offset by simply increasing the number of delay stages. For verification, the proposed ADC is fabricated in a 0.18 mu m CMOS. With a single supply voltage of 0.6 V, the ADC consumes 1.3 mu W at the maximum sampling rate of 100 kS/s. The measured ENOB is 9.3 b showing a figure of merit of 21 fJ/conversion-step.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.relation.isPartOfIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.titleA 21 fJ/Conversion-Step 100 kS/s 10-bit ADC With a Low-Noise Time-Domain Comparator for Low-Power Sensor Interface-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/JSSC.2010.2102590-
dc.author.googleLee, SK-
dc.author.googlePark, SJ-
dc.author.googlePark, HJ-
dc.author.googleSim, JY-
dc.relation.volume46-
dc.relation.issue3-
dc.relation.startpage651-
dc.relation.lastpage659-
dc.contributor.id10100874-
dc.relation.journalIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.46, no.3, pp.651 - 659-
dc.identifier.wosid000287661500009-
dc.date.tcdate2019-02-01-
dc.citation.endPage659-
dc.citation.number3-
dc.citation.startPage651-
dc.citation.titleIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.citation.volume46-
dc.contributor.affiliatedAuthorLee, SK-
dc.contributor.affiliatedAuthorPark, HJ-
dc.contributor.affiliatedAuthorSim, JY-
dc.identifier.scopusid2-s2.0-79952071655-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc75-
dc.description.scptc85*
dc.date.scptcdate2018-05-121*
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordAuthorAnalog-to-digital converter-
dc.subject.keywordAuthorcomparator-
dc.subject.keywordAuthorsuccessive approximation ADC-
dc.subject.keywordAuthorsensor interface-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-

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박홍준PARK, HONG JUNE
Dept of Electrical Enginrg
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