Solvent-free solution processed passivation layer for improved long-term stability of organic field-effect transistors
SCIE
SCOPUS
- Title
- Solvent-free solution processed passivation layer for improved long-term stability of organic field-effect transistors
- Authors
- Nam, S; Jang, J; Kim, K; Yun, WM; Chung, DS; Hwang, J; Kwon, OK; Chang, T; Park, CE
- Date Issued
- 2011-01
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- In an effort to realize organic field-effect transistors (OFETs) that are stable over long periods of time, we have designed an organic-inorganic hybrid passivation material (TGD622t) prepared via a nonhydrolytic sol-gel process that does not require the use of solvents. Fourier-transform infrared spectroscopy, atomic force microscopy, and UV-visible spectroscopy demonstrated the high density and low porosity of the organic-inorganic hybrid transparent TGD622t film after low-temperature curing (below 100 degrees C). The dense TGD622t passivation layer, which exhibited a water vapor transmission rate (WVTR) of 0.434 g m(-2) per day, effectively protected the poly[9,9-dioctylfluorenyl-2,7- diyl]-co-(bithiophene)]-based OFETs from humidity and oxygen in ambient air, resulting in a much more robust OFET performance with long-term stability relative to the operation of unpassivated devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25062
- DOI
- 10.1039/C0JM00898B
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 21, no. 3, page. 775 - 780, 2011-01
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