Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

Abstract

We demonstrate the use of n-type N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). Due to the low work function of this material, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold. The low injection barrier reduced the contact resistance, yielding a high field effect mobility in transistors based on PEDOT:Tos (0.145 cm(2)/Vs); the field effect mobility was 16 times higher than that in transistors based on gold (0.009 cm(2)/Vs). (C) 2011 Elsevier B.V. All rights reserved.