DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, C | - |
dc.contributor.author | Kwack, Y | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | An, TK | - |
dc.contributor.author | Hong, K | - |
dc.contributor.author | Nam, S | - |
dc.contributor.author | Park, M | - |
dc.contributor.author | Choi, WS | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2016-04-01T02:24:10Z | - |
dc.date.available | 2016-04-01T02:24:10Z | - |
dc.date.created | 2011-03-10 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.other | 2011-OAK-0000022848 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25065 | - |
dc.description.abstract | We have fabricated high performance ambipolar thin-film transistors (TFTs) and an inverter based on organic-inorganic bilayer structures composed of an upper pentacene layer and a lower atomic-layer-deposited zinc oxide (ZnO) layer. The insertion of a dodecanoic acid (DA) self-assembled monolayer (SAM) into the interface between pentacene and ZnO results in an improvement in the morphology of the pentacene layer and in well-balanced ambipolarity with hole and electron mobilities of 0.34 and 0.38 cm(2)V (1)s (1), respectively. The ambipolar TFTs with DA-treated ZnO exhibit a hole to electron mobility ratio of approximately 0.90, which is higher by a factor of similar to 2.8 than that of ambipolar TFTs with untreated ZnO. We also tested the introduction of a perfluorooctyltriethoxysilane (PFOTES) SAM; the effects of the permanent dipole fields of the SAMs on the electrical and ambipolar characteristics of the hybrid TFTs were investigated. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.subject | Ambipolar thin-film transistor | - |
dc.subject | Organic-inorganic hybrid transistor | - |
dc.subject | Complementary-like inverter | - |
dc.subject | Organic semiconductor | - |
dc.subject | Oxide semiconductor | - |
dc.subject | Pentacene | - |
dc.subject | ZnO | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | DIELECTRIC ROUGHNESS | - |
dc.subject | PERFORMANCE | - |
dc.subject | TRANSPORT | - |
dc.subject | SURFACE | - |
dc.subject | FUNCTIONALIZATION | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | FABRICATION | - |
dc.subject | MORPHOLOGY | - |
dc.subject | DEVICES | - |
dc.title | Ambipolar thin-film transistors and an inverter based on pentacene/self-assembled monolayer modified ZnO hybrid structures for balanced hole and electron mobilities | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1016/J.ORGEL.2010.12.008 | - |
dc.author.google | Yang, C | - |
dc.author.google | Kwack, Y | - |
dc.author.google | Kim, SH | - |
dc.author.google | An, TK | - |
dc.author.google | Hong, K | - |
dc.author.google | Nam, S | - |
dc.author.google | Park, M | - |
dc.author.google | Choi, WS | - |
dc.author.google | Park, CE | - |
dc.relation.volume | 12 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 411 | - |
dc.relation.lastpage | 418 | - |
dc.contributor.id | 10104044 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.12, no.3, pp.411 - 418 | - |
dc.identifier.wosid | 000287322800002 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 418 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 411 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 12 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-78651549831 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 16 | - |
dc.description.scptc | 16 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DIELECTRIC ROUGHNESS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | Ambipolar thin-film transistor | - |
dc.subject.keywordAuthor | Organic-inorganic hybrid transistor | - |
dc.subject.keywordAuthor | Complementary-like inverter | - |
dc.subject.keywordAuthor | Organic semiconductor | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Pentacene | - |
dc.subject.keywordAuthor | ZnO | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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